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| inchange semiconductor product specification silicon npn power transistors 2SD2151 description ? ? with to-220fa package ? low collector to emitter saturation voltage ? large collector current i c applications ? for power switching applicaitons pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 130 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a t c =25 ?? 30 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2151 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma, i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =6a; i b =0.3a 0.5 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =1a 1.5 v v be sat-1 base-emitter saturation voltage i c =6a; i b =0.3a 1.5 v v be sat-2 base-emitter saturation voltage i c =10a; i b =1a 2.5 v i cbo collector cut-off current v cb =100v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe-1 dc current gain i c =0.1a ; v ce =2v 45 h fe-2 dc current gain i c =3a ; v ce =2v 90 260 h fe-3 dc current gain i c =6a ; v ce =2v 30 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 0.5 | s t s storage time 2.0 | s t f fall time i c =6a ;i b1 =-i b2 =0.6a v cc =50v 0.2 | s ? h fe-2 classifications q p 90-180 130-260 inchange semiconductor product specification 3 silicon npn power transistors 2SD2151 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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